MOSFETs With Exceptional Quality Available Online With Speedy Delivery

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RFD14N05LSM, onsemi

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

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FDMC86102LZ, onsemi

PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor

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FQPF2N80, onsemi

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

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NTA4153NT1G, onsemi

N-Channel Power MOSFET, 20V, ON Semiconductor

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FCMT250N65S3, onsemi

SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. 700 V @ TJ = 150 oC Leadless Ultra-thin SMD package Kelvin contact Ultra Low Gate Charge (Typ. Qg = 24 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF) Optimized Capacitance Typ. RDS(on) = 210 mΩ Moisture Sensitivity Level 1 guarantee Internal Gate Resistance: 0.5 Ω Benefits: Higher system reliability at low temperature operation High power density Low gate noise and switching loss Low switching loss Low switching loss Lower peak Vds and lower Vgs oscillation Applications: Computing Telecommunication Industrial End Products: Telecom / Server Adapter LED Lighting

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FDPF18N50, onsemi

UniFET™ N-Channel MOSFET, Fairchild Semiconductor UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

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FQP32N20C, onsemi

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

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FDA70N20, onsemi

UniFET™ N-Channel MOSFET, Fairchild Semiconductor UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

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FDA20N50F, onsemi

UniFET™ N-Channel MOSFET, Fairchild Semiconductor UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

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FQP4N80, onsemi

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

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FQP5N60C, onsemi

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

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FDPF39N20, onsemi

UniFET™ N-Channel MOSFET, Fairchild Semiconductor UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

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MOSFETs

What are metal-oxide-semiconductor field-effect transistors (MOSFETs)?

How do MOSFETs work?

How to choose a MOSFET as a switch?

What are depletion and enhancement modes?

Applications

What is MOSFET Switch Efficiency?

New Items

RFD14N05LSM, onsemi

FDMC86102LZ, onsemi

FQPF2N80, onsemi

NTA4153NT1G, onsemi

FCMT250N65S3, onsemi

FDPF18N50, onsemi

FQP32N20C, onsemi

FDA70N20, onsemi

FDA20N50F, onsemi

FQP4N80, onsemi

FQP5N60C, onsemi

FDPF39N20, onsemi

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