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ON Semiconductor NGTB25N120SWG

NGTB25N120SWG ON Semiconductor
NGTB25N120SWG
NGTB25N120SWG
NGTB25N120SWG ON Semiconductor
ON Semiconductor

Product Information

Dimensions:
16.25 x 5.3 x 21.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
385 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Gate Capacitance:
4420pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
50A
Detailed Description:
IGBT Trench 1200V 50A 385W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 25A
Td (on/off) @ 25°C:
87ns/179ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
178nC
Base Part Number:
NGTB25
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
154ns
Switching Energy:
1.95mJ (on), 600µJ (off)
Test Condition:
600V, 25A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench
Current - Collector Pulsed (Icm):
100A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
385W
Customer Reference:
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB25N120SWG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. The product is available in [Cannel Type] channel. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. The maximum collector current includes 50a. It features igbt trench 1200v 50a 385w through hole to-247. Features 2.4v @ 15v, 25a. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in [Package/ Case]. Base Part Number: ngtb25. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 154ns. Test condition included 600v, 25a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench type. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 385w.

pdf icon
Datasheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
Site Addition 09/Feb/2016(PCN Assembly/Origin)
pdf icon
FPCN20461X 27/nov/2015(PCN Design/Specification)
pdf icon
Mult Dev EOL 18/Oct/2018(PCN Obsolescence/ EOL)
pdf icon
NGTB25N120SWG(Datasheets)

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FAQs

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We accept all major payment methods for all products including ET11232206. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with NGTB25N120SWG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NGTB25N120SWG. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NGTB25N120SWG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11232206 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number NGTB25N120SWG.
Yes. You can also search NGTB25N120SWG on website for other similar products.
Yes. We ship NGTB25N120SWG Internationally to many countries around the world.
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