Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
96 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
417 W
Series:
MDmesh
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.15mm
Width:
5.15mm
Length:
15.75mm
Maximum Drain Source Resistance:
110 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
110mOhm @ 22.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
134 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
417W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3800 pF @ 25 V
standardLeadTime:
52 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW45
ECCN:
EAR99
