Maximum Continuous Drain Current:
42 A
Transistor Material:
Si
Width:
5.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
PowerFLAT 5 x 6
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
30 nC @ 4.5 V
Channel Type:
P
Length:
6.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
100 W
Series:
STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
34 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
175°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
26mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3780 pF @ 25 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
STripFET™ F6
Supplier Device Package:
PowerFlat™ (5x6)
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL42
ECCN:
EAR99
