SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL STMicroelectronics SCTWA40N120G2V-4

Enrgtech Part No: ET21599301
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Manufacturer Part No:
SCTWA40N120G2V-4
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Manufacturer: STMicroelectronics

SCTWA40N120G2V-4 SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL STMicroelectronics

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Product Information

Maximum Drain Source Voltage:

1200 V

Maximum Continuous Drain Current:

45 A

Mounting Type:

Through Hole

Series:

SCTWA40N120G2V-4

Channel Type:

Maximum Drain Source Resistance:

0.07 Ω

Package Type:

HiP247-4

Transistor Material:

SiC

Pin Count:

FET Feature:

Vgs(th) (Max) @ Id:

4.9V @ 1mA

Operating Temperature:

-55°C ~ 200°C (TJ)

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This is SiC N-Channel MOSFET 45 A 1200 V 3-Pin HiP247-4LL manufactured by STMicroelectronics. The manufacturer part number is SCTWA40N120G2V-4. The product is available in through hole configuration. The product sctwa40n120g2v-4, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The typical Vgs (th) (max) of the product is 4.9v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 61 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 100mohm @ 20a, 18v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in bulk. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +18v, -5v. The product's input capacitance at maximum includes 1233 pf @ 800 v. It has a long 52 weeks standard lead time. to-247-4 is the supplier device package value. The continuous current drain at 25°C is 36a (tc). The product carries maximum power dissipation 277w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sctwa40, a base product number of the product.

DataSheet - SCTWA40N120G2V-4(Technical Reference)

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