Toshiba Semiconductor and Storage 2SD1221-Y(Q)

2SD1221-Y-Q- Toshiba Semiconductor and Storage 2SD1221-Y(Q)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0095
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 500mA, 5V
Frequency - Transition:
3MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max):
60 V
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PW-MOLD
Power - Max:
1 W
Base Product Number:
2SD1221
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SD1221-Y(Q). The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. Furthermore, 100 @ 500ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz. The 1v @ 300ma, 3a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 60 v. The transistor is a npn type. It is shipped in bulk. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100µa (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. pw-mold is the supplier device package value. The maximum power of the product is 1 w. Moreover, it corresponds to 2sd1221, a base product number of the product. The product is designated with the ear99 code number

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2SD1221(Datasheets)

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