Toshiba Semiconductor and Storage TPC8211(TE12L,Q,M)

Enrgtech Part No: ET14929836
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Manufacturer Part No:
TPC8211(TE12L,Q,M)
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

FET Feature:

Logic Level Gate

HTSUS:

8541.21.0095

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Operating Temperature:

150°C (TJ)

Package / Case:

8-SOIC (0.173", 4.40mm Width)

Gate Charge (Qg) (Max) @ Vgs:

25nC @ 10V

Rds On (Max) @ Id, Vgs:

36mOhm @ 3A, 10V

Current - Continuous Drain (Id) @ 25°C:

5.5A

Configuration:

2 N-Channel (Dual)

Package:

Tape & Reel (TR)

Drain to Source Voltage (Vdss):

30V

Moisture Sensitivity Level (MSL):

1 (Unlimited)

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8211(TE12L,Q,M). The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 36mohm @ 3a, 10v. The continuous current drain at 25°C is 5.5a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr). The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1250pf @ 10v. The product is available in surface mount configuration. 8-sop (5.5x6.0) is the supplier device package value. The maximum power of the product is 450mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpc8211, a base product number of the product. The product is designated with the ear99 code number

Mosfets Prod Guide(Datasheets)

TPC8211(Datasheets)

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Toshiba Semiconductor and Storage TPC8211(TE12L,Q,M)

TPC8211(TE12L,Q,M)

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