FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V, 32nC @ 10V
Rds On (Max) @ Id, Vgs:
20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc), 54A (Tc)
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 25V, 2100pF @ 25V
standardLeadTime:
99 Weeks
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® SO-8 Dual Asymmetric
Power - Max:
27W (Tc), 48W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJ264
ECCN:
EAR99
