Category:
Power MOSFET
Dimensions:
16.13 x 5.21 x 21.34mm
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1000 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
600 mΩ
Package Type:
PLUS247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
270 nC @ 15 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7050 pF @ 25 V
Length:
16.13mm
Pin Count:
3
Typical Turn-Off Delay Time:
80 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
700 W
Series:
Linear
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.34mm
Typical Turn-On Delay Time:
36 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Rds On (Max) @ Id, Vgs:
600mOhm @ 11A, 20V
Gate Charge (Qg) (Max) @ Vgs:
270 nC @ 15 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
700W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7050 pF @ 25 V
standardLeadTime:
61 Weeks
Mounting Type:
Through Hole
Series:
Linear
Supplier Device Package:
PLUS247™-3
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTX22
ECCN:
EAR99
