Category:
Power MOSFET
Dimensions:
10.4 x 4.6 x 10.75mm
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
I2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
183 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
11400 pF @ 25 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
144.4 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
DeepGate, STripFET
Maximum Gate Source Voltage:
±20 V
Height:
10.75mm
Typical Turn-On Delay Time:
31.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Rds On (Max) @ Id, Vgs:
3mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs:
183 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
11400 pF @ 25 V
Mounting Type:
Through Hole
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
I2PAK
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STI260N
ECCN:
EAR99
