Category:
Power MOSFET
Dimensions:
15.75 x 5.15 x 20.15mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
5.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
300 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
164 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5930 pF@ 25 V
Length:
15.75mm
Pin Count:
3
Typical Turn-Off Delay Time:
141 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
320 W
Series:
STripFET F3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
20.15mm
Typical Turn-On Delay Time:
115 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
45 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
45mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
164 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
5930 pF @ 25 V
Mounting Type:
Through Hole
Series:
STripFET™
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
320W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW75N
ECCN:
EAR99
