Category:
Power MOSFET
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Gate Source Voltage:
-25 V, +25 V
Series:
MDmesh M2
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
9 A
Minimum Gate Threshold Voltage:
2V
Transistor Material:
Si
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
450mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
538 pF @ 100 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ M2
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD12
ECCN:
EAR99
