Category:
Power MOSFET
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
490 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
2.3S
Typical Turn-Off Delay Time:
17 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
±30 V
Height:
6.22mm
Typical Turn-On Delay Time:
8.7 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
1.7 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Rds On (Max) @ Id, Vgs:
1.7Ohm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
490 pF @ 25 V
standardLeadTime:
28 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-251AA
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFU430
ECCN:
EAR99
