Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TW070J120B,S1Q. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.8v @ 20ma. The product has -55°c ~ 175°c operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 67 nc @ 20 v. It has a maximum Rds On and voltage of 90mohm @ 18a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tube. The product has a 1200 v drain to source voltage. The maximum Vgs rate is ±25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 272w (tc). The product's input capacitance at maximum includes 1680 pf @ 800 v. It has a long 8 weeks standard lead time. The product is available in through hole configuration. to-3p(n) is the supplier device package value. The continuous current drain at 25°C is 36a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to tw070j120, a base product number of the product. The product is designated with the ear99 code number
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