Transistor Type:
NPN
Dimensions:
2.9 x 1.5 x 1.1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Emitter Voltage:
10 V
Maximum Operating Frequency:
5.5 GHz
Maximum Emitter Base Voltage:
3 V
Package Type:
CP
Number of Elements per Chip:
1
Maximum DC Collector Current:
70 mA
Maximum Collector Base Voltage:
20 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
55GN01
Detailed Description:
RF Transistor NPN 10V 70mA 4.5GHz 200mW Surface Mount 3-CP
Noise Figure (dB Typ @ f):
1.9dB @ 1GHz
Transistor Type:
NPN
Frequency - Transition:
4.5GHz
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
70mA
Customer Reference:
Supplier Device Package:
3-CP
Voltage - Collector Emitter Breakdown (Max):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
200mW
Gain:
9.5dB
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Manufacturer:
ON Semiconductor
