Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
60 V
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 A
Maximum Collector Base Voltage:
60 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
42 Weeks
Base Part Number:
KSD1691
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 5A 1.3W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 2A, 1V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 200mA, 2A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.3W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
