Infineon BFR193E6327HTSA1 NPN RF Bipolar Transistor, 80 MA, 12 V, 3-Pin SOT-23

BFR193E6327HTSA1 Infineon NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23

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Product Information

Transistor Type:

NPN

Dimensions:

2.9 x 1.3 x 1mm

Mounting Type:

Surface Mount

Maximum Power Dissipation:

580 mW

Maximum Collector Base Voltage:

20 V

Maximum Collector Emitter Voltage:

12 V

Maximum Operating Frequency:

8 GHz

Maximum Emitter Base Voltage:

2 V

Package Type:

SOT-23

Number of Elements per Chip:

Maximum DC Collector Current:

80 mA

Maximum Operating Temperature:

+150 °C

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This is NPN RF Bipolar Transistor 80 mA 12 V 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BFR193E6327HTSA1. The transistor is a npn type. The given dimensions of the product include 2.9 x 1.3 x 1mm. The product is available in surface mount configuration. It has a maximum operating temperature of +150 °c.

BFR193 Low Noise Silicon Bipolar RF Transistor Data Sheet(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.

You will get a confirmation email regarding your order of Infineon BFR193E6327HTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23. You can also check on our website or by contacting our customer support team for further order details on Infineon BFR193E6327HTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23.

We use our internationally recognized delivery partners UPS/DHL. Collection of ET16792399 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number BFR193E6327HTSA1.

Yes. You can also search BFR193E6327HTSA1 on website for other similar products.

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BFR193E6327HTSA1

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