Minimum DC Current Gain:
300, 430
Transistor Type:
PNP
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
500 mW
Maximum Collector Emitter Voltage:
-120 V
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
50 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
120 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 1mA, 6V
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Cut Tape (CT)
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
500 mW
Base Product Number:
KSA992
ECCN:
EAR99
