Toshiba TTD1415B,S4X(S Dual PNP Darlington Pair, 7 A 100 V HFE:1000, 3-Pin TO-220SIS

TTD1415B-S4X-S Toshiba TTD1415B,S4X(S Dual PNP Darlington Pair, 7 A 100 V HFE:1000, 3-Pin TO-220SIS
Toshiba

Product Information

Dimensions:
10 x 4.5 x 15mm
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Collector Cut-off Current:
2µA
Width:
4.5mm
Base Current:
0.7A
Maximum Continuous Collector Current:
7 A
Package Type:
TO-220SIS
Number of Elements per Chip:
2
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
120 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
6 V
Length:
100mm
Pin Count:
3
Minimum DC Current Gain:
1000
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W @ 25 °C
Maximum Collector Emitter Voltage:
100 V
Height:
15mm
RoHs Compliant
Checking for live stock

This is Dual PNP Darlington Pair 7 A 100 V HFE:1000 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TTD1415B,S4X(S. The given dimensions of the product include 10 x 4.5 x 15mm. Furthermore, the product is 4.5mm wide. The product is available in single configuration. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Its accurate length is 100mm. The product is available in through hole configuration. In addition, the height is 15mm.

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ESD Control Selection Guide V1(Technical Reference)
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TTD1415B NPN Darlington Transistor Datasheet(Technical Reference)

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