Maximum Drain Source Voltage:
12 V
Typical Gate Charge @ Vgs:
8.4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Series:
NexFET
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.2mm
Width:
2.2mm
Length:
1.15mm
Maximum Drain Source Resistance:
23 mΩ
Package Type:
PICOSTAR
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-XFBGA
Rds On (Max) @ Id, Vgs:
-
Gate Charge (Qg) (Max) @ Vgs:
10.9nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
-
Configuration:
2 N-Channel (Dual) Common Drain
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-PicoStar
Power - Max:
2.3W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD83325
ECCN:
EAR99
