Category:
Power MOSFET
Dimensions:
1.52 x 3.42 x 0.2mm
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
3.42mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
11 mΩ
Package Type:
PICOSTAR
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1620 pF
Length:
1.52mm
Pin Count:
10
Forward Transconductance:
48S
Typical Turn-Off Delay Time:
709 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
NexFET
Maximum Gate Source Voltage:
±20 V
Height:
0.2mm
Typical Turn-On Delay Time:
164 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
10-XFLGA
Rds On (Max) @ Id, Vgs:
-
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
-
Configuration:
2 N-Channel (Dual) Common Drain
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
10-Picostar (3.37x1.47)
Power - Max:
2.5W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD87501
ECCN:
EAR99
