FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
6.9nC @ 10V, 11.3nC @ 10V
RoHS Status:
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C:
11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
325pF @ 10V, 600pF @ 10V
standardLeadTime:
36 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
8-Power33 (3x3)
Power - Max:
2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIZ328
ECCN:
EAR99
