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This is manufactured by NXP USA Inc.. The manufacturer part number is SI9936DY,518. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 50mohm @ 5a, 10v. The maximum gate charge and given voltages include 35nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 5a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr). The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 2 (1 year). The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. 8-so is the supplier device package value. The maximum power of the product is 900mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to si9936, a base product number of the product. The product is designated with the ear99 code number
For more information please check the datasheets.
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