FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
-
RoHS Status:
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C:
33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
standardLeadTime:
17 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
8-PowerPair® (6x5)
Power - Max:
3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIZF928
ECCN:
EAR99