FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA, 2V @ 800µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs:
7.2nC @ 4.5V, 21.5nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1180pF @ 13V, 3603pF @ 13V
standardLeadTime:
42 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-PQFN (5x6)
Power - Max:
960mW (Ta), 1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFD1
ECCN:
EAR99
