Infineon IKW50N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Infineon

Product Information

Pin Count:
3
Dimensions:
16.13 x 5.21 x 21.1mm
Channel Type:
N
Package Type:
TO-247
Energy Rating:
1.78mJ
Mounting Type:
Through Hole
Switching Speed:
30kHz
Gate Capacitance:
3100pF
Number of Transistors:
1
Transistor Configuration:
Single
Maximum Power Dissipation:
274 W
Maximum Gate Emitter Voltage:
±20V
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-40 °C
Maximum Collector Emitter Voltage:
650 V
Maximum Continuous Collector Current:
80 A
RoHs Compliant
224 - In Stock

In Stock

Each

Quantity
Unit Price (ex VAT)
Price
1
£ 3.83
£ 3.83
Mfr Part No:
IKW50N65ES5XKSA1
Seller:
Infineon
Origin:
Warranty:
Manufacturer
Data Code:
ET100012514
Order Today!
From: United Kingdom
Est Ship Date: 15 Jul, 2026
Est Fastest Delivery: 16 Jul, 2026

This is IGBT 80 A 650 V 3-Pin TO-247 Through Hole manufactured by Infineon. The manufacturer part number is IKW50N65ES5XKSA1. The given dimensions of the product include 16.13 x 5.21 x 21.1mm. The product is available in [Cannel Type] channel. The product is available in through hole configuration. It has a maximum operating temperature of +175 °c. Whereas, the minimum operating temperature of the product is -40 °c.

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0900766b81579122.pdf(RS)
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0900766b81644faf.pdf(RS)

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