GT40WR21,Q(O Toshiba IGBT, 40 A 1800 V, 3-Pin TO-3P

GT40WR21-Q-O GT40WR21,Q(O Toshiba IGBT, 40 A 1800 V, 3-Pin TO-3P
GT40WR21,Q(O
Toshiba

Product Information

Dimensions:
15.5 x 4.5 x 20mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
375 W
Maximum Collector Emitter Voltage:
1800 V
Channel Type:
N
Maximum Continuous Collector Current:
40 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3P
Switching Speed:
0.55µs
Gate Capacitance:
4500pF
Maximum Operating Temperature:
175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 40 A 1800 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT40WR21,Q(O. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. The product is available in [Cannel Type] channel. It has a maximum operating temperature of 175 °c.

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GT40WR21, Silicon N-Channel IGBT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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