GT50MR21,Q(O Toshiba IGBT, 50 A 900 V, 3-Pin TO-3P

GT50MR21-Q-O GT50MR21,Q(O Toshiba IGBT, 50 A 900 V, 3-Pin TO-3P

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Product Information

Dimensions:

15.5 x 4.5 x 20mm

Mounting Type:

Through Hole

Maximum Power Dissipation:

230 W

Maximum Collector Emitter Voltage:

900 V

Channel Type:

Maximum Continuous Collector Current:

50 A

Maximum Gate Emitter Voltage:

±25V

Package Type:

TO-3P

Switching Speed:

0.4µs

Gate Capacitance:

1500pF

Maximum Operating Temperature:

+175 °C

Pin Count:

Checking for live stock

This is IGBT 50 A 900 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT50MR21,Q(O. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c.

ESD Control Selection Guide V1(Technical Reference)

GT50MR21, Silicon N-Channel IGBT(Technical Reference)

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You can order Toshiba brand products with GT50MR21,Q(O directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of GT50MR21,Q(O Toshiba IGBT, 50 A 900 V, 3-Pin TO-3P. You can also check on our website or by contacting our customer support team for further order details on GT50MR21,Q(O Toshiba IGBT, 50 A 900 V, 3-Pin TO-3P.

We use our internationally recognized delivery partners UPS/DHL. Collection of ET14095258 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number GT50MR21,Q(O.

Yes. You can also search GT50MR21,Q(O on website for other similar products.

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GT50MR21,Q(O

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