Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
339 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3PN
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
208nC
Base Part Number:
FGA30N120
Detailed Description:
IGBT Trench Field Stop 1200V 60A 339W Through Hole TO-3PN
Reverse Recovery Time (trr):
730ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 30A
Supplier Device Package:
TO-3PN
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
339W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
90A
Manufacturer:
ON Semiconductor
