Dimensions:
16.2 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PN
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
60A
Detailed Description:
IGBT Field Stop 650V 60A 300W Through Hole TO-3PN
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 30A
Td (on/off) @ 25°C:
14ns/102ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
87nC
Base Part Number:
FGA30N65
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
35ns
Switching Energy:
716µJ (on), 208µJ (off)
Test Condition:
400V, 30A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
90A
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PN
Packaging:
Tube
Power - Max:
300W
Customer Reference:
