Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
63 W
Maximum Collector Emitter Voltage:
1000 V
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3P
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
275nC
Base Part Number:
FGA50N100
Detailed Description:
IGBT NPT and Trench 1000V 50A 156W Through Hole TO-3P
Reverse Recovery Time (trr):
1.5µs
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
50A
Vce(on) (Max) @ Vge, Ic:
2.9V @ 15V, 60A
Supplier Device Package:
TO-3P
Voltage - Collector Emitter Breakdown (Max):
1000V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
156W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
IGBT Type:
NPT and Trench
Current - Collector Pulsed (Icm):
100A
Manufacturer:
ON Semiconductor
