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onsemi FGA20N120FTDTU IGBT, 40 A 1200 V, 3-Pin TO-3PN, Through Hole

FGA20N120FTDTU onsemi IGBT, 40 A 1200 V, 3-Pin TO-3PN, Through Hole
FGA20N120FTDTU
FGA20N120FTDTU
onsemi

Product Information

Dimensions:
15.8 x 5 x 18.9mm
Mounting Type:
Through Hole
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
40 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3PN
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
40 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
-
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 20A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Td (on/off) @ 25°C:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
137 nC
Reverse Recovery Time (trr):
447 ns
REACH Status:
REACH Unaffected
Test Condition:
-
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
60 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P
Power - Max:
298 W
Base Product Number:
FGA20N120
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is IGBT 40 A 1200 V 3-Pin TO-3PN Through Hole manufactured by onsemi. The manufacturer part number is FGA20N120FTDTU. The given dimensions of the product include 15.8 x 5 x 18.9mm. The product is available in through hole configuration. The product is available in [Cannel Type] channel. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. The maximum collector current includes 40 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2v @ 15v, 20a. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in [Package/ Case]. It has a trr (reverse recovery time) of 447 ns. In addition, it is reach unaffected. It is shipped in tube. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench field stop type. to-3p is the supplier device package value. The maximum power of the product is 298 w. Moreover, it corresponds to fga20n120, a base product number of the product. The product is designated with the ear99 code number

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mold compound change 17/Sep/2019(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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FGA20N120FTD(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

Yes. You can also search FGA20N120FTDTU on website for other similar products.
We accept all major payment methods for all products including ET21466426. Please check your shopping cart at the time of order.
You can order onsemi brand products with FGA20N120FTDTU directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi FGA20N120FTDTU IGBT, 40 A 1200 V, 3-Pin TO-3PN, Through Hole. You can also check on our website or by contacting our customer support team for further order details on onsemi FGA20N120FTDTU IGBT, 40 A 1200 V, 3-Pin TO-3PN, Through Hole.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21466426 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number FGA20N120FTDTU.
Yes. You can also search FGA20N120FTDTU on website for other similar products.
Yes. We ship FGA20N120FTDTU Internationally to many countries around the world.
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