Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263

IGB50N65H5ATMA1 Infineon  IGBT, 80 A 650 V, 3-Pin TO-263
Infineon

Product Information

Maximum Power Dissipation:
270 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
20V
Package Type:
TO-263
Pin Count:
3
RoHs Compliant
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This is IGBT 80 A 650 V 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IGB50N65H5ATMA1. The product is available in [Cannel Type] channel.

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Datasheet - IGB50N65H5ATMA1(Technical Reference)

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET21618137 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number IGB50N65H5ATMA1.
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