Maximum Drain Source Voltage:
8 V
Typical Gate Charge @ Vgs:
12 nC @ 4.5 V, 20 nC @ 8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
960 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.02mm
Width:
1.4mm
Length:
3.04mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.4 A
Transistor Material:
Si
Maximum Drain Source Resistance:
35 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
