Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
11.7 nC @ 10 V, 25 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W, 3.1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.55mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
1.2V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.7 A, 6.8 A
Transistor Material:
Si
Maximum Drain Source Resistance:
42.5 mΩ, 62 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
