Maximum Continuous Drain Current:
9.3 A, 9.6 A
Transistor Material:
Si
Width:
6.2mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
35 V
Maximum Gate Threshold Voltage:
3V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.7 nC @ 10 V, 19.2 nC @ 10 V
Channel Type:
N, P
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
8.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
65 mΩ
