Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
12.3 nC @ 10 V, 13.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
3V
Height:
0.9mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
85 mΩ, 190 mΩ
Package Type:
TSOT-26
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2 A, 4.5 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
