onsemi NXH50M65L4C2SG

NXH50M65L4C2SG onsemi
onsemi

Product Information

Package Type:
DIP
Pin Count:
27
Maximum Switching Frequency:
65 kHz
Current - Collector (Ic) (Max):
50 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max):
650 V
Operating Temperature:
-40°C ~ 150°C (TJ)
Input Capacitance (Cies) @ Vce:
4.877 nF @ 20 V
Package / Case:
27-PowerDIP Module (1.858", 47.20mm)
Input:
Single Phase Bridge Rectifier
NTC Thermistor:
Yes
REACH Status:
REACH Unaffected
Configuration:
Three Phase Inverter
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
77 Weeks
IGBT Type:
-
Current - Collector Cutoff (Max):
250 µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
27-DIP
Power - Max:
20 mW
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NXH50M65L4C2SG. The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.2v @ 15v, 75a. The maximum collector emitter breakdown voltage of the product is 650 v. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. Its input values include single phase bridge rectifier. In addition, it is reach unaffected. The product is available in three phase inverter configuration. It is shipped in tube. Its typical moisture sensitivity level is not applicable. It has a long 77 weeks standard lead time. In addition, 250 µa is the maximum current at collector cutoff. The product is available in through hole configuration. 27-dip is the supplier device package value. The maximum power of the product is 20 mw. The product is designated with the ear99 code number

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Datasheet - NXH50M65L4C2SG(Technical Reference)
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Wafer Fab Change 27/Dec/2022(PCN Assembly/Origin)
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NXH50M65L4C2SG(Datasheets)

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