Maximum Continuous Drain Current:
79 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
SON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.8 nC @ 4.5 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
46 W
Series:
NexFET
Maximum Gate Source Voltage:
-12 V, +16 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
7.4 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
5.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
8.1 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
+16V, -12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.7W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 12.5 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON-CLIP (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD16406
ECCN:
EAR99
