Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
1.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
8 V
Package Type:
DSBGA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.9 nC @ 4 V
Channel Type:
P
Length:
1.5mm
Pin Count:
9
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.7 W
Series:
NexFET
Maximum Gate Source Voltage:
-6 V
Height:
0.35mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
14 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
950mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
9-UFBGA, DSBGA
Rds On (Max) @ Id, Vgs:
9.9mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
24.6 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
8 V
Vgs (Max):
-6V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.7W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1130 pF @ 4 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
9-DSBGA
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD22204
ECCN:
EAR99
