Typical Gate Charge @ Vgs:
13 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
90 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
5V
Height:
15.75mm
Width:
4.6mm
Length:
10.4mm
Maximum Drain Source Resistance:
1.25 Ω
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9 A
Minimum Gate Threshold Voltage:
3V
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
1.25Ohm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
950 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
450 pF @ 100 V
standardLeadTime:
52 Weeks
Mounting Type:
Through Hole
Series:
SuperMESH5™
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP6N95
ECCN:
EAR99
