Maximum Continuous Drain Current:
240 A
Transistor Material:
Si
Width:
9.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PowerSO
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
85 nC @ 10 V
Channel Type:
N
Length:
9.6mm
Pin Count:
10
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
STripFET F3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
3.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.6 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerSO-10 Exposed Bottom Pad
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 120A, 10V
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6800 pF @ 25 V
Mounting Type:
Surface Mount
Series:
STripFET™ III
Supplier Device Package:
10-PowerSO
Current - Continuous Drain (Id) @ 25°C:
240A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STV240
ECCN:
EAR99
