Category:
Power MOSFET
Dimensions:
2 x 2 x 0.8mm
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.8V
Package Type:
SON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.9V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.1 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
260 pF @ 15 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
4.2 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Series:
NexFET
Maximum Gate Source Voltage:
-8 V, +10 V
Height:
0.8mm
Typical Turn-On Delay Time:
2.8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
42 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
30mOhm @ 4A, 8V
Gate Charge (Qg) (Max) @ Vgs:
2.7 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
3V, 8V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+10V, -8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
340 pF @ 15 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-WSON (2x2)
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD17313
ECCN:
EAR99
