Category:
Power MOSFET
Dimensions:
6.1 x 5 x 1.1mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.8V
Package Type:
SON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1560 pF @ 15 V
Length:
6.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
15 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.2 W
Series:
NexFET
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Typical Turn-On Delay Time:
8.3 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.6 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1980 pF @ 15 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (5x6)
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD17505
ECCN:
EAR99
