Category:
Power MOSFET
Dimensions:
10.67 x 4.7 x 16.51mm
Maximum Continuous Drain Current:
110 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.3V
Maximum Drain Source Resistance:
8.8 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
38 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2980 pF @ 50 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
214 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Typical Turn-On Delay Time:
8.4 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
7.7mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
214W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3870 pF @ 50 V
standardLeadTime:
6 Weeks
Mounting Type:
Through Hole
Series:
NexFET™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19531
ECCN:
EAR99
