Category:
Power MOSFET
Dimensions:
6.1 x 5.1 x 1.05mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
1.9V
Package Type:
SON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13.3 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2040 pF @ 12.5 V
Length:
6.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.1 W
Series:
NexFET
Maximum Gate Source Voltage:
+16/-12 V
Height:
1.05mm
Typical Turn-On Delay Time:
11.9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.3 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.9V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
+16V, -12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
2660 pF @ 12.5 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (5x6)
Current - Continuous Drain (Id) @ 25°C:
31A (Ta), 100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD16407
ECCN:
EAR99
