Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SCTH50N120-7
Channel Type:
N
Maximum Gate Threshold Voltage:
5.1V
Maximum Drain Source Resistance:
0.065 Ω
Package Type:
H2PAK-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
55 A
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.1V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
122 nC @ 20 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
69mOhm @ 40A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Power Dissipation (Max):
270W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1900 pF @ 400 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
H2PAK-7
Current - Continuous Drain (Id) @ 25°C:
65A
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTH50
ECCN:
EAR99
