Maximum Drain Source Voltage:
600 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
STD11N60M6
Channel Type:
N
Maximum Gate Threshold Voltage:
4.75V
Maximum Drain Source Resistance:
0.5 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Pin Count:
3
FET Feature:
-
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
10.3 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
520mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
387 pF @ 100 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D-PAK (TO-252)
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
90W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD11
