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Silicon carbide Power MOSFET 1200 V, 21

SCTWA70N120G2V-4 Silicon carbide Power MOSFET 1200 V, 21
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
4.9V
Maximum Drain Source Resistance:
0.03 Ω
Package Type:
HiP247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
91 A
Transistor Material:
Silicon
Pin Count:
4
FET Feature:
-
Vgs(th) (Max) @ Id:
4.9V @ 1mA
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-4
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
30mOhm @ 50A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Bulk
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
3540 pF @ 800 V
standardLeadTime:
52 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Current - Continuous Drain (Id) @ 25°C:
91A (Tc)
Power Dissipation (Max):
547W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SCTWA70
RoHs Compliant
Checking for live stock

This is Silicon carbide Power MOSFET 1200 V 21 manufactured by STMicroelectronics. The manufacturer part number is SCTWA70N120G2V-4. The product is available in through hole configuration. The product is available in [Cannel Type] channel. The typical Vgs (th) (max) of the product is 4.9v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 150 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 30mohm @ 50a, 18v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in bulk. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +22v, -10v. The product's input capacitance at maximum includes 3540 pf @ 800 v. It has a long 52 weeks standard lead time. to-247-4 is the supplier device package value. The continuous current drain at 25°C is 91a (tc). The product carries maximum power dissipation 547w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to sctwa70, a base product number of the product.

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Datasheet - SCTWA70N120G2V-4(Technical Reference)

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