N-Channel MOSFET, 60 A, 1200 V HiP247 STMicroelectronics SCTW60N120G2

SCTW60N120G2 N-Channel MOSFET, 60 A, 1200 V HiP247 STMicroelectronics
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
60 A
Mounting Type:
Through Hole
Channel Type:
N
Package Type:
HiP247
Pin Count:
3
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
94 nC @ 8 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
52mOhm @ 30A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Bulk
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds:
1969 pF @ 800 V
standardLeadTime:
52 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
HiP247™
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
389W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SCTW60
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 60 A 1200 V HiP247 manufactured by STMicroelectronics. The manufacturer part number is SCTW60N120G2. The product is available in through hole configuration. The product is available in [Cannel Type] channel. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 94 nc @ 8 v. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 52mohm @ 30a, 18v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in bulk. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +18v, -5v. The product's input capacitance at maximum includes 1969 pf @ 800 v. It has a long 52 weeks standard lead time. hip247™ is the supplier device package value. The continuous current drain at 25°C is 60a (tc). The product carries maximum power dissipation 389w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sctw60, a base product number of the product.

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Datasheet - SCTW60N120G2(Technical Reference)

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